Internal photoemission of electrons from ultra-thin heterojunctions - Belgium
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Posted on : 07 June 2017
- You will be responsible for conducting research focused on development of methodology allowing one to quantify energy band offsets and electrostatic potential profiles at interfaces of heterogeneous semiconductor or metal electrodes with insulating films.
- This experimental technique is based on the phenomenon of internal photoemission (IPE) of electrons into insulator which enables determination of both the electron band edge energies in the photoemitting hetero-junction and the orientation of electric field at its interface with insulator.
- Interfaces of materials relevant to nano-electronic devices including high-mobility semiconductors and metals with wide range of work function values will be addressed.
- The possibility of detecting electrostatic potential perturbation by individual interface charges, e.g., ionized dopants, will also be explored.
- The latter is of particular importance for analysis of doping in device structures employing few-monolayer conductor (e.g., graphene) or semiconductor (such as transition metal dichalcogenides MoS2, WS2) layers on top of insulating substrate.
- Master degree in Physics or Electrical/Materials Engineering with excellent grades
- English language proficiency
- A keen interest in research
- Highly motivated
- We offer 1 year full time PhD scholarship with possibility to extend to a full 4 year PhD.
- You will be welcomed in an international team of about 10 young PhD researchers.